OPTIMIZATION OF INSULATED HfO2 DIELECTRICS OF GaN/InN/GaN/ In0.1Ga0.9N ENHANCEMENT MODE OF MIS-HEMT HETEROSTRUCTURE FOR HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. NIJOTECH [Internet]. 2019 Mar. 29 [cited 2026 Apr. 27];38(2):503-11. Available from: https://www.nijotech.com/index.php/nijotech/article/view/1997