“OPTIMIZATION OF INSULATED HfO2 DIELECTRICS OF GaN/InN/GaN/ In0.1Ga0.9N ENHANCEMENT MODE OF MIS-HEMT HETEROSTRUCTURE FOR HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS”, NIJOTECH, vol. 38, no. 2, pp. 503–511, Mar. 2019, Accessed: Apr. 27, 2026. [Online]. Available: https://www.nijotech.com/index.php/nijotech/article/view/1997